2011

An Improved Method for Differential Conductance Measurements

Please Login at the top
of the page to download.

As modern electronics continue to shrink, researchers are increasingly looking to nanotechnology as the basis for the next breakthrough in device size and power consumption. Indeed, as semiconductor structures are made smaller and smaller, the distinction between small silicon geometries and large molecules becomes blurred. Approached from either direction, the consequences are the same. Quantum behavior such as tunneling begins to play an important role in the electrical characteristics. In the macroscopic world, conductors may have obeyed Ohm’s Law (Figure 1a), but in the nanoscale, Ohm’s definition of resistance is no longer relevant (Figure 1b). Because the slope of the I-V curve is no longer a fundamental constant of the material, a detailed measurement of the slope of that I-V curve at every point is needed to study nanodevices. This plot of differential conductance (dG = dI/dV) is the most important measurement made on small scale devices, but presents a unique set of challenges.

White Papers

4 Critical Factors: Deploying GigE Vision in Real-Time Industrial Imaging
Sponsored by Teledyne DALSA
Drive On – E-Bikes Shift into High Gear
Sponsored by HP
Thinking Outside of the Box: Optimizing System Design With Embedded Expertise
Sponsored by Curtiss Wright
Liquid Silicone Rubber Takes the Heat
Sponsored by Proto Labs
Tubing & Hose Buying Tips
Sponsored by Newage Industries
Force Sensors for Design
Sponsored by Tekscan

White Papers Sponsored By: