2011

30-Die, Near-Infrared LED Array

altOpto Diode Corporation (Newbury Park, CA) has developed the first in a series of high power LED arrays, the OD-850-30-030. The new 30- die near-infrared (NIR) LED array delivers more efficient operation and higher power with a narrow beam angle of 30 degrees. The device has a peak wavelength of 850nm (min. 840nm and max. 865nm) and a total optical power output of 16 watts. Thermal parameters for storage range from -40°C to 125°C, with the operating temperature range from -20°C to 100°C. The maximum junction temperature is 125°C with a thermal resistance, junction to case, of 0.8°C per watt. Photonics West Booth #5325

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