2011

30-Die, Near-Infrared LED Array

altOpto Diode Corporation (Newbury Park, CA) has developed the first in a series of high power LED arrays, the OD-850-30-030. The new 30- die near-infrared (NIR) LED array delivers more efficient operation and higher power with a narrow beam angle of 30 degrees. The device has a peak wavelength of 850nm (min. 840nm and max. 865nm) and a total optical power output of 16 watts. Thermal parameters for storage range from -40°C to 125°C, with the operating temperature range from -20°C to 100°C. The maximum junction temperature is 125°C with a thermal resistance, junction to case, of 0.8°C per watt. Photonics West Booth #5325

For Free Info Visit http://info.hotims.com/34450-206

White Papers

Bridging the Armament Test Gap
Sponsored by Marvin Test Solutions
Managing Risk in Medical Connectors
Sponsored by Fischer Connectors
Overcome Challenges of Your Highly Constrained PCB Designs
Sponsored by Mentor Graphics
PICO Brochure
Sponsored by Nordson EFD
Massive CFD Data Handled Quickly Without Compromise - Maximize Your CFD Investment
Sponsored by Intelligent Light
Navigating the Intellectual Property Roadblocks to Open Innovation
Sponsored by e Zassi

White Papers Sponsored By: