Silicon Carbide Schottky Diodes
Created on Saturday, 01 October 2011
ROHM Semiconductor (San Diego, CA) has announced the
SCS1xxAGC series of silicon carbide (SiC) Schottky barrier
diodes (SBDs). The SiC diode maintains low forward voltage
over a wide operating temperature range, which results in
lower power dissipation under actual operating conditions.
The 10A rated part, for example, has a VF of 1.5V at 25 °C and
1.6V at 150 °C. Low VF reduces conduction loss, while the
ultra-short reverse recovery time (15ns, typical) enables switching
and minimizes switching loss.
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