ROHM Semiconductor (San Diego, CA) has announced the
SCS1xxAGC series of silicon carbide (SiC) Schottky barrier
diodes (SBDs). The SiC diode maintains low forward voltage
over a wide operating temperature range, which results in
lower power dissipation under actual operating conditions.
The 10A rated part, for example, has a VF of 1.5V at 25 °C and
1.6V at 150 °C. Low VF reduces conduction loss, while the
ultra-short reverse recovery time (15ns, typical) enables switching
and minimizes switching loss.
For Free Info Visit http://info.hotims.com/34459-209
This week's Question: MIT recently unveiled its prototype design for SpaceX founder Elon Musk's Hyperloop, a high-speed ground transport system that could theoretically send passengers from Los Angeles to San Francisco in half an hour. The...
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