2011

Silicon Carbide Schottky Diodes

altROHM Semiconductor (San Diego, CA) has announced the SCS1xxAGC series of silicon carbide (SiC) Schottky barrier diodes (SBDs). The SiC diode maintains low forward voltage over a wide operating temperature range, which results in lower power dissipation under actual operating conditions. The 10A rated part, for example, has a VF of 1.5V at 25 °C and 1.6V at 150 °C. Low VF reduces conduction loss, while the ultra-short reverse recovery time (15ns, typical) enables switching and minimizes switching loss.











For Free Info Visit http://info.hotims.com/34459-209


White Papers

Designing Ring Projections for Hermetic Sealing
Sponsored by Miyachi Unitek
The True Cost of Bearing Lubrication
Sponsored by igus
Increasing Automotive Safety Through Embedded Radar Technologies
Sponsored by Freescale
PICO xMOD Data Sheet
Sponsored by Nordson EFD
Multi-Purpose Non-Contact Position/Displacement Sensing
Sponsored by Kaman
When Wire Feedthroughs Make Sense
Sponsored by Douglas Electrical Components

White Papers Sponsored By: