2011

alt
The SCS1xxAGC Series of Silicon Carbide (SiC) Schottky BarrierDiodes (SBDs).
ROHM Semiconductor (San Diego, CA) has announced the SCS1xxAGC series of silicon carbide (SiC) Schottky barrier diodes (SBDs). The SiC diode maintains low forward voltage over a wide operating temperature range, which results in lower power dissipation under actual operating conditions. The 10A rated part, for example, has a VF of 1.5V at 25 °C and 1.6V at 150 °C. Low VF reduces conduction loss, while the ultra-short reverse recovery time (15ns, typical) enables switching and minimizes switching loss.











For Free Info Visit http://info.hotims.com/34459-209


White Papers

Tech-Clarity Perspective: Reducing Non-Value Added Work in Engineering
Sponsored by Dassault Systemes
Evaluating Electrically Insulating Epoxies
Sponsored by Master Bond
Reliable VFD Cables Boost Productivity, Minimize Downtime
Sponsored by Lapp Group
Basics of Electric Heaters
Sponsored by Hotwatt
Implementing High Density Embedded Computing (HDEC) Solutions
Sponsored by Trenton Systems
When Wire Feedthroughs Make Sense
Sponsored by Douglas Electrical Components

White Papers Sponsored By:

The U.S. Government does not endorse any commercial product, process, or activity identified on this web site.