2011

Silicon Carbide Schottky Diodes

altROHM Semiconductor (San Diego, CA) has announced the SCS1xxAGC series of silicon carbide (SiC) Schottky barrier diodes (SBDs). The SiC diode maintains low forward voltage over a wide operating temperature range, which results in lower power dissipation under actual operating conditions. The 10A rated part, for example, has a VF of 1.5V at 25 °C and 1.6V at 150 °C. Low VF reduces conduction loss, while the ultra-short reverse recovery time (15ns, typical) enables switching and minimizes switching loss.











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