2012

Infrared Emitters

Opto Diode Corp. (Newbury Park, CA) has introduced three new infrared (IR) emitters. The OD-850W gallium aluminum arsenide (GaAlAs) LED features a wide-emission angle and typical optical output of 40mW. The new device has a peak emission wavelength at 850nm.

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Hermetically sealed, the standard TO-46 package is designed with gold-plated surfaces and welded caps. The IR LED offers optical power of 40mW typical at 100mA, continuous forward current at 100mA, and peak forward current at 300mA (absolute maximum ratings at 25°C). The storage and operating temperatures range from -40°C to 100°C, with a maximum junction temperature of 100°C.

For Free Info Visit http://info.hotims.com/40433-208

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