2012

Infrared Emitters

Opto Diode Corp. (Newbury Park, CA) has introduced three new infrared (IR) emitters. The OD-850W gallium aluminum arsenide (GaAlAs) LED features a wide-emission angle and typical optical output of 40mW. The new device has a peak emission wavelength at 850nm.

alt
Hermetically sealed, the standard TO-46 package is designed with gold-plated surfaces and welded caps. The IR LED offers optical power of 40mW typical at 100mA, continuous forward current at 100mA, and peak forward current at 300mA (absolute maximum ratings at 25°C). The storage and operating temperatures range from -40°C to 100°C, with a maximum junction temperature of 100°C.

For Free Info Visit http://info.hotims.com/40433-208

White Papers

Microelectronics Package for Extreme Environments
Sponsored by Anaren
What is Wiring Synthesis?
Sponsored by Mentor Graphics
When Wire Feedthroughs Make Sense
Sponsored by Douglas Electrical Components
Basics of Electric Heaters
Sponsored by Hotwatt
Comparison of Interface Pressure Measurement Options
Sponsored by Tekscan
Use Metal Bellows To Replace Springs
Sponsored by Servometer

White Papers Sponsored By:

The U.S. Government does not endorse any commercial product, process, or activity identified on this web site.