This module represents the highest frequency solid-state power amplifier to date.

Figure 1. The Amplifier Is Packaged in a WR5 waveguide module, with electric-field-plane alumina probes to interface the chip to the waveguide, and bypass capacitors to suppress low-frequency oscillations. The module is compact and can easily be integrated into a test system or with wafer probes.

A power-amplifier module that operates in the frequency range of 145 to 165 GHz has been designed and constructed as a combination of (1) a previously developed monolithic microwave integrated circuit (MMIC) power amplifier and (2) a waveguide module. The amplifier chip was needed for driving a high-electron-mobility- transistor (HEMT) frequency doubler. While it was feasible to connect the amplifier and frequency-doubler chips by use of wire bonds, it was found to be much more convenient to test the amplifier and doubler chips separately. To facilitate separate testing, it was decided to package the amplifier and doubler chips in separate waveguide modules. Figure 1 shows the resulting amplifier module.