High-Power Single-Mode 2.65-μm InGaAsSb/AlInGaAsSb Diode Lasers
- Created on Monday, 01 July 2013
This innovation is useful for targeted gas detection instruments in environmental monitoring, safety, quality control, and fundamental science applications.
Central to the advancement of both satellite and in-situ science are improvements in continuous-wave and pulsed infrared laser systems coupled with integrated miniaturized optics and electronics, allowing for the use of powerful, single- mode light sources aboard both satellite and unmanned aerial vehicle platforms.
There is a technological gap in supplying adequate laser sources to address the mid-infrared spectral window for spectroscopic characterization of important atmospheric gases. For high-power applications between 2 to 3 μm, commercial laser technologies are unsuitable because of limitations in output power. For instance, existing InP-based laser systems developed for fiber-based telecommunications cannot be extended to wavelengths longer than 2 μm. For emission wavelengths shorter than 3 μm, intersubband devices, such as infrared quantum cascade lasers, become inefficient due to band-offset limitations. To date, successfully demonstrated single-mode GaSb-based laser diodes emitting between 2 and 3 μm have employed lossy metal Bragg gratings for distributed- feedback coupling, which limits output power due to optical absorption.
By optimizing both the quantum well design and the grating fabrication process, index-coupled distributed-feedback 2.65-μm lasers capable of emitting in excess of 25 mW at room temperature have been demonstrated. Specifically, lasers at 3,777 cm–1 (2.65 μm) have been realized to interact with strong absorption lines of HDO and other isotopologues of H2O. With minor modifications of the optical cavity and quantum well designs, lasers can be fabricated at any wavelength within the 2-to-3- μm spectral window with similar performance. At the time of this reporting, lasers with this output power and wavelength accuracy are not commercially available.
Monolithic ridge-waveguide GaSb lasers were fabricated that utilize second- order lateral Bragg gratings to generate single-mode emission from InGaAsSb/AlInGaAsSb multi-quantum well structures. The device fabrication utilizes etched index-coupled gratings in the top AlGaAsSb cladding of the laser chip along the ridge waveguide, whereas commercial lasers that emit close to this wavelength include loss-coupled metal gratings that limit the output power of the laser.
Semiconductor-laser-based spectrometers can be used to replace gas sensors currently used in industry and government. With the availability of high-power laser sources at mid-infrared wavelengths, sensors can target strong fundamental gas absorption lines to maximize instrument sensitivity.
In accordance with Public Law 96-517, the contractor has elected to retain title to this invention. Inquiries concerning rights for its commercial use should be addressed to:
Innovative Technology Assets Management
Mail Stop 321-123
4800 Oak Grove Drive
Pasadena, CA 91109-8099