A Room Temperature, Low-Stress Bonding Process to Reduce the Impact of Use Stress on a Sputtering Target Assembly
- Tuesday, 18 June 2013
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As semiconductor processing has moved to 300mm wafers, the size of deposition targets, including tungsten (W), tantalum (Ta), and molybdenum (Mo), has grown, and process complexity has increased as well. This added size and complexity contributes to the stress on a target assembly during the physical vapor deposition (PVD) process, and the target assembly’s ability to withstand this stress has a large effect on the resulting deposition rates, yields, and film properties. One of the major sources of stress is the coefficient of thermal expansion (CTE) mismatch between metal targets in semiconductor processes, such as tungsten (CTE of 4.5*10-6/°C), tantalum (6.5*10-6/°C), and molybdenum (5.1*10-6/°C) compared with their backing plates, which are typically made of aluminum (23*10-6/°C), brass (21.2*10-6/°C), or copper-chrome (17.6*10- 6/°C). Standard soldering and solid state joining processes have difficulty controlling stress produced by the CTE-mismatch. We will demonstrate how the NanoBond® process can be used to control stresses during the bonding and deposition processes. Modeling will be conducted to compare standard bonding processes to the NanoBond process, accounting for CTE mismatches.