Researchers Measure Near-Field Behavior of Semiconductor Microparticles
- Friday, 26 April 2013
Recent progress in the engineering of plasmonic structures has enabled new kinds of nanometer-scale optoelectronic devices as well as high-resolution optical sensing.
“For the first time, we have measured nanometer-scale infrared absorption in semiconductor plasmonic microparticles using a technique that combines atomic force microscopy with infrared spectroscopy,” explained William P. King, an Abel Bliss Professor in the Department of Mechanical Science and Engineering (MechSE) at the University of Illinois. “Atomic force microscope infrared spectroscopy allows us to directly observe the plasmonic behavior within microparticle infrared antennas.”
The ability to measure near field behavior in plasmonic structures allows the researchers to begin expanding design and test parameters for plasmonic materials and more complex optical materials.
Also: Learn about a room-temperature sub-diffraction-limited plasmon laser.