This amplifier exhibits gain of 5 dB at 340 GHz.
Figure 1 depicts a monolithic microwave integrated-circuit (MMIC) single-stage amplifier containing an InP-based high- electron-mobility transistor (HEMT) plus coplanar-waveguide (CPW) transmission lines for impedance matching and input and output coupling, all in a highly miniaturized layout as needed for high performance at operating frequencies of hundreds of gigahertz. This is one in a series of devices that are intermediate products of a continuing effort to develop advanced MMIC amplifiers for sub-millimeter-wavelength imaging systems, scientific instrumentation, heterodyne receivers, and other applications.
This work was done by David Pukala, Lorene Samoska, King Man Fung, and Todd Gaier of Caltech and W. R. Deal, Gerry Mei, Vesna Radisic, and Richard Lai of Northrop Grumman Corporation for NASA’s Jet Propulsion Laboratory. The contributors would like to acknowledge the support of Dr. Mark Rosker and the Army Research Laboratory. This work was supported by the DARPA SWIFT Program and Army Research Laboratory under the DARPA MIPR no.06-U037 and ARL Contract no. W911QX-06-C-0050.
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