Improving Thermomechanical Properties of SiC/SiC Composites
- Created: Friday, 01 September 2006
In order to make it possible to eliminate these defects and improve the thermomechanical properties of ceramic composites that contain SiC matrices, researchers at Glenn Research Center (GRC) have developed a high-temperature heat or annealing treatment that can be performed after deposition of a CVI SiC matrix into a fiber preform. Using (1) SiC fibers of a type developed by GRC and denoted “Sylramic-iBN” and (2) BN-based fiber coatings, which are both stable in their functions under the treatment conditions, the GRC researchers have observed minimal loss of strength in composite panels formed from two dimensional architectural preforms and various contents of CVI SiC. More importantly, the NASA treatment significantly increased panel thermal conductivity and creep resistance, as indicated in Figures 1 and 2, respectively.
For the treated panels, the volume fractions of the fibers and BN coatings were about 36 percent and 8 percent, respectively. The first case represented in Figure 1 is that of a panel containing 50 volume percent SiC formed by CVI only. In the second case, the remaining open porosity in the 35-percent CVI SiC matrix was filled by a process denoted PIP, which involved repeated infiltration and pyrolysis of an SiC-yielding polymer (hybrid CVI + PIP). For the third case represented in Figure 1, the remaining open porosity in a 35-percent CVI SiC matrix was filled by a process that involved repeated melt infiltration (MI) of silicon at a temperature near 1,400 °C (hybrid CVI + MI). For the first two cases, the heat treatment was performed after final matrix formation; for the last case, the treatment was performed after CVI and before MI. In all cases, panel thermal conductivity was significantly increased by the NASA heat treatment. On an absolute scale, Figure 1 also shows the detrimental effect of trapped porosity on composite conductivity for the matrices formed by CVI only or by hybrid CVI + PIP, and the beneficial effects of the hybrid CVI + MI approach that more effectively fills the CVI SiC pores. However, Figure 2 shows that in the case of the matrix fully formed by CVI only, creep resistance and temperature capability were greater than in the case of the matrix formed by hybrid CVI + MI. Thus, because of their lack of elemental silicon, the long-term use temperature of the CVI-only matrix (as well as the hybrid CVI + PIP matrix) could exceed 1,400 °C, which is well above the long-term use temperature for panels containing matrices made by hybrid CVI + MI.
This work was done by James A. DiCarlo of Glenn Research Center and Ramakrishna T. Bhatt of the Army Research Laboratory. For further information, access the Technical Support Package (TSP) free on-line at www.techbriefs.com/tsp under the Materials category.
Inquiries concerning rights for the commercial use of this invention should be addressed to NASA Glenn Research Center, Innovative Partnerships Office, Attn: Steve Fedor, Mail Stop 4–8, 21000 Brookpark Road, Cleveland, Ohio 44135. Refer to LEW-17595-1.