
Submillimeter-sized thermoelectric devices based on thick films of Bi2–xSbxTe3 are undergoing development. As electronic circuits are designed with ever greater packaging densities and power densities, there is an increasing need for small thermoelectric devices to provide active spot cooling for power amplifiers and other heat-generating electronic components. Bi2–xSbxTe3 is the preferred thermoelectric material for the operational temperature range (<200 °C) of typical advanced microelectronic components. Bi2–xSbxTe3 thermoelectric devices could also be used as electric-power generators; moreover, because of the smallness of the thermoelectric legs in these devices, the numbers of legs can be of the order of 100 times those of conventional bulk thermoelectric devices, making it possible to generate higher potentials (of the order of 100 V), that are more compatible with other electronic components.
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