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Compact, Single-Stage MMIC InP HEMT Amplifier
new!
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Date added: 07/01/2008 |
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This work outlines the present state-of-the-art in terms of on-wafer S-parameter measurements, on-wafer
noise figure measurements, and on-wafer power measurements up to 350 GHz for a variety of MMIC and new Submillimeter-wave MMIC (S-MMICs) chips. |
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Low-Temperature Supercapacitors
new!
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Date added: 07/01/2008 |
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A supercapacitor technology has been developed that can operate as low as -75 °C. This technology can be used to store energy and deliver high power at temperatures
lower than commercially available components,which are rated to -40 °C. |
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Dual-Input AND Gate From Single- Channel Thin-Film FET
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Date added: 04/01/2008 |
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A regio-regular poly(3-hexylthiophene)thin film transistor having a split-gate architecture has been fabricated on a doped silicon/silicon nitride substrate and characterized. This device is seen to demonstrate AND logic functionality. The device functionality is controlled by applying either 0 or –10 volts to each of the gate electrodes. |
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Error-Detecting Counters for FPGA and ASIC State Machines
hot!
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Date added: 02/01/2008 |
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A scheme has been found for protecting critical counters in FPGAs and ASICs from SEUs using monotonicity checking. This scheme involves very little overhead, in fact just a 2 bit auxiliary counter is used at minimum, or just 2 extra states in a state machine. |
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Efficient G 4 FET-Based Logic Circuits
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Date added: 01/02/2008 |
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In this report we present optimal circuits, based on G4 FET device, for Boolean function of up to 3 variables. We also provide optimal circuits based on NAND and NOR gates to compare the efficiency of G4FET with the standard devices. |
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Circuit and Method of Communication Over DC Power Line
hot!
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Date added: 12/03/2007 |
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This device moves computational, sensing, and actuation abilities closer to the source, allows for the networking of multiple like nodes to each other and to a central processor, and can do so using nothing more than the already in-situ power wiring of the system. |
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MMIC Amplifiers for 90 to 130 GHz
hot!
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Date added: 10/01/2007 |
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The chips were fabricated and measured to have between 15- 20 dB of gain between 90-130 GHz. Modules were designed and fabricated and we then measured the output power from the chips in the modules. We obtained between 20-45 mW of power over the 90-130 GHz range, the highest power obtained at the time of this report from any solid-state MMIC modules above W-band. |
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G4-FETs as Universal and Programmable Logic Gates
hot!
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Date added: 07/02/2007 |
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A new SOI device, the G4FET, has been developed that combines two different transistors: 1-JFET and 2- MOSFET superimposed in a single silicon island so that they share the same body. |
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