A regio-regular poly(3-hexylthiophene)thin film transistor having a split-gate architecture has been fabricated on a doped silicon/silicon nitride substrate and characterized. This device is seen to demonstrate AND logic functionality. The device functionality is controlled by applying either 0 or –10 volts to each of the gate electrodes.

This work outlines the present state-of-the-art in terms of on-wafer S-parameter measurements, on-wafer noise figure measurements, and on-wafer power measurements up to 350 GHz for a variety of MMIC and new Submillimeter-wave MMIC (S-MMICs) chips.

An autonomous disturbance detection and monitoring system was developed with imaging radar that combines the unique capabilities of imaging radar with high throughput onboard processing technology and onboard automated response capability based on specific science algorithms. This smart sensor development leverages off recently developed technologies in real-time onboard synthetic aperture radar (SAR) processor and onboard automated response software as well as science algorithms previously developed for radar remote sensing applications.

In this report we present optimal circuits, based on G4 FET device, for Boolean function of up to 3 variables. We also provide optimal circuits based on NAND and NOR gates to compare the efficiency of G4FET with the standard devices.