This device moves computational, sensing, and actuation abilities closer to the source, allows for the networking of multiple like nodes to each other and to a central processor, and can do so using nothing more than the already in-situ power wiring of the system.

In this report we present optimal circuits, based on G4 FET device, for Boolean function of up to 3 variables. We also provide optimal circuits based on NAND and NOR gates to compare the efficiency of G4FET with the standard devices.

A scheme has been found for protecting critical counters in FPGAs and ASICs from SEUs using monotonicity checking. This scheme involves very little overhead, in fact just a 2 bit auxiliary counter is used at minimum, or just 2 extra states in a state machine.

A regio-regular poly(3-hexylthiophene)thin film transistor having a split-gate architecture has been fabricated on a doped silicon/silicon nitride substrate and characterized. This device is seen to demonstrate AND logic functionality. The device functionality is controlled by applying either 0 or –10 volts to each of the gate electrodes.

A supercapacitor technology has been developed that can operate as low as -75 °C. This technology can be used to store energy and deliver high power at temperatures lower than commercially available components,which are rated to -40 °C.