Property Value
Name Dual-Input AND Gate From Single- Channel Thin-Film FET
Description A regio-regular poly(3-hexylthiophene)thin film transistor having a split-gate architecture has been fabricated on a doped silicon/silicon nitride substrate and characterized. This device is seen to demonstrate AND logic functionality. The device functionality is controlled by applying either 0 or –10 volts to each of the gate electrodes.
Filesize 899.04 kB
Last updated on 03/31/2008 09:36

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