
Power amplifiers comprising InP-based high-electron-mobility transistors (HEMTs) in coplanar-waveguide (CPW) circuits designed for operation at frequencies of hundreds of gigahertz, and a test set for on-wafer measurement of their power levels have been developed. These amplifiers utilize an advanced 35-nm HEMT monolithic microwave integrated-circuit (MMIC) technology and have potential utility as local- oscillator drivers and power sources in future submillimeter-wavelength heterodyne receivers and imaging systems. The test set can reduce development time by enabling rapid output power characterization, not only of these and similar amplifiers, but also of other coplanar-waveguide power circuits, without the necessity of packaging the circuits.
One of the amplifiers designed and tested at 330 GHz is shown in Figure 1. It is a three-stage unit containing one HEMT in the first stage, two HEMTs in the second stage, and four HEMTs in the third stage, with 1:2 CPW power splitters between the HEMT stages. The outputs of the third-stage HEMTs are coupled via a 4:1 CPW power combiner. Each HEMT is a two- finger device having an output periphery of 10 μm per finger, so that the total output periphery per HEMT is 20 μm. Hence, the total output periphery of all four third- stage HEMTs is 80 μm. Because the layout is so extremely compact that individual biasing of each stage cannot be accommodated, the gate and drain bias conductors of all seven transistors are tied together.This work was done by King Man Fung, Todd Gaier, Lorene Samoska, William Deal, Vesna Radisic, Xiaobing Mei, and Richard Lai of Caltech for NASA’s Jet Propulsion Laboratory. For more information, contact This e-mail address is being protected from spambots. You need JavaScript enabled to view it . NPO-45022
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