Semiconductors & ICs

Ka-Band Waveguide Two-Way Hybrid Combiner for MMIC Amplifiers

This technology is applicable as a power combiner for solid-state power amplifiers (SSPAs) with unequal and arbitrary power output ratios.The design, simulation, and characterization of a novel Ka-band (32.05±0.25 GHz) rectangular waveguide two-way branch-line hybrid unequal power combiner (with port impedances matched to that of a standard WR-28 waveguide) has been created to combine input signals, which are in phase and with an amplitude ratio of two. The measured return loss and isolation of the branch-line hybrid are better than 22 and 27 dB, respectively. The measured combining efficiency is 92.9 percent at the center frequency of 32.05 GHz. This circuit is efficacious in combining the unequal output power from two Ka-band GaAs pseudomorphic high electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC) power amplifiers (PAs) with high efficiency.

Posted in: Semiconductors & ICs, Briefs, TSP

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Compact, Reliable EEPROM Controller

This controller prevents inadvertent writes in an EEPROM. A compact, reliable controller for an electrically erasable, programmable readonly memory (EEPROM) has been developed specifically for a space-flight application. The design may be adaptable to other applications in which there are requirements for reliability in general and, in particular, for prevention of inadvertent writing of data in EEPROM cells.

Posted in: Semiconductors & ICs, Briefs

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Reconfigurable, Bi-Directional Flexfet Level Shifter for Low- Power, Rad-Hard Integration

These level shifters enable the development of multi-level voltage systems.Two prototype Reconfigurable, Bidirectional Flexfet Level Shifters (ReBiLS) have been developed, where one version is a stand-alone component designed to interface between external low voltage and high voltage, and the other version is an embedded integrated circuit (IC) for interface between internal low-voltage logic and external high-voltage components. Targeting stand-alone and embedded circuits separately allows optimization for these distinct applications. Both ReBiLS designs use the commercially available 180-nm Flex - fet Inde pend ently Double-Gated (IDG) SOI CMOS (silicon on insulator, complementary metal oxide semiconductor) technology.

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Compact, Miniature MMIC Receiver Modules for an MMIC Array Spectrograph

MMIC multi-chip modules can be used in astrophysics telescopes, automotive radar, and communication links.A single-pixel prototype of a W-band detector module with a digital backend was developed to serve as a building block for large focal-plane arrays of monolithic millimeter-wave integrated circuit (MMIC) detectors. The module uses low-noise amplifiers, diode-based mixers, and a WR10 waveguide input with a coaxial local oscillator. State-of-the-art InP HEMT (high electron mobility transistor) MMIC amplifiers at the front end provide approximately 40 dB of gain. The measured noise temperature of the module, at an ambient temperature of 300 K, was found to be as low as 450 K at 95 GHz.

Posted in: Semiconductors & ICs, Briefs, TSP

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Magnetic-Field-Tunable Superconducting Rectifier

This device would be useful in superconducting circuit applications.Superconducting electronic components have been developed that provide current rectification that is tunable by design and with an externally applied magnetic field to the circuit component. The superconducting material used in the device is relatively free of pinning sites with its critical current determined by a geometric energy barrier to vortex entry. The ability of the vortices to move freely inside the device means this innovation does not suffer from magnetic hysteresis effects changing the state of the superconductor.

Posted in: Semiconductors & ICs, Briefs, TSP

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Waveguide Transition for Submillimeter-Wave MMICs

An integrated waveguide-to-MMIC (monolithic microwave integrated circuit) chip operating in the 300-GHz range is designed to operate well on highpermittivity semiconductor substrates typical for an MMIC amplifier, and allows a wider MMIC substrate to be used, enabling integration with larger MMICs (power amplifiers). The waveguide-to- CBCPW (conductor-backed coplanar waveguide) transition topology is based on an integrated dipole placed in the Eplane of the waveguide module. It demonstrates low loss and good impedance matching. Measurement and simulation demonstrate that the loss of the transition and waveguide loss is less than 1-dB over a 340-to-380-GHz bandwidth.

Posted in: Semiconductors & ICs, Briefs, TSP

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Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate

Rhombohedrally grown lattice-matched semiconductor alloys can be used in photovoltaic solar cells and photon detectors. SiGe is an important semiconductor alloy for high-speed field effect transistors (FETs), high-temperature thermoelectric devices, photovoltaic solar cells, and photon detectors. The growth of SiGe layer is difficult because SiGe alloys have different lattice constants from those of the common Si wafers, which leads to a high density of defects, including dislocations, micro-twins, cracks, and delaminations.

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