Opto Diode Corp. (Newbury Park, CA) has introduced three infrared (IR) emitters. The OD-850W gallium aluminum arsenide (GaAlAs) LED features a wide-emission angle and typical optical output of 40mW at 100mA. The device has a peak emission wavelength at 850nm, a wavelength more closely matched to the peak response of photo transistors and opto integrated circuits (ICs).

Hermetically sealed, the standard TO-46 package is designed with gold-plated surfaces and welded caps. The IR LED offers continuous forward current at 100mA, and peak forward current at 300mA (absolute maximum ratings at 25°C). The storage and operating temperatures range from -40°C to +100°C, with a maximum junction temperature of 100°C.

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Aluminum Electronic equipment Integrated circuits Light emitting diodes (LEDs) Lighting Manufacturing processes Materials handling Metals Optics Parts Powering & Controlling LEDs Seals and gaskets Storage Transistors Welding

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    This article first appeared in the March, 2012 issue of Lighting Technology Magazine (Vol. 36 No. 3).

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