Mitsubishi Electric (Tokyo, Japan) recently introduced a transfer molded power module (T-PM) designed for hybrid and electric vehicle applications. The J-Series T-PM, incorporating proprietary technology that ensures power loss reduction, has a lifespan 30 times longer than industrial power modules and is also Pb-free - including the terminal plating.
Two carrier-stored trench gate bipolar transistor (CSTBT™) IGBT chips are incorporated in a 600V/300A power module. The J-Series T-PM offers enhanced reliability by utilizing direct lead bonding (DLB), a technology developed by Mitsubishi Electric. DLB reduces power loss through decreasing wiring resistance and inductance in modules through the use of an extended main terminal made long enough to be bonded directly to the power chip. Previously, power chips were connected to the terminals by aluminum wire.
The long power cycle lifespan is based on repetitive operation tests with the chip energized, rapidly changing the temperature within a range of 50-100 degrees C. The temperature cycle lifespan is based on repetitive operation tests, modulating the temperature between -40 degrees C and 125 degrees C without the chip energized.
In the Americas, the transfer molded power module is now available through Powerex, Inc. (Youngwood, PA).