A process has been developed to manufacture a self-aligned transistor where a thermally intolerant material may be used as a material of a gate insulating film and the gate electrode. The process makes it possible to produce high-performance, highly reliable, and inexpensive transistor devices. It leads to the improvement of electrical characteristics such as speed. Moreover, the process uses conventional semiconductor fabrication processes, making it possible to reduce manufacturing costs.

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A positioning control apparatus and a positioning control method allow high-precision positioning with high-speed response over a broad range of movement as required in machine tools, semiconductor production equipment, surface profilers, and data storage equipment. The composite servo system realizes high-precision and high-response speed positioning control over a large range that was difficult with conventional systems. It combines a coarse positioner having a large range of movement with a fine positioner having a small range of movement.

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