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Wafer-scale processed AlGaN/GaN sensors being tested. (Credit: Georgia Tech Lorraine)

A transfer technique could allow high-performance gallium nitride gas sensors to be grown on sapphire substrates and then transferred to metallic or flexible polymer support materials. The process doubles their sensitivity to nitrogen dioxide gas, and boosts response time by a factor of six.

In operation, the devices can differentiate among nitrogen oxide, nitrogen dioxide, and ammonia. Because the devices are approximately 100 by 100 microns, sensors for multiple gases can be produced on a single integrated device.

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