Polyimide tape (Kapton™ or equivalent) has been found to be effective as a material for masking selected areas of a semi- conductor wafer that is about to be processed in a reactive-ion etching (RIE) apparatus. The conventional etch- resistant masking materials for protecting selected areas against etching are photoresists and oxides. These materials are patterned into masks by standard photolithographic techniques. The use of polyimide tape is an inexpensive option that provides additional flexibility for increasing the protection of some areas and for implementing lastminute design changes without having to incur the high cost of making optical masks for photolithography.
In experiments, polyimide tape proved effective in preventing RIE of masked areas. Specimens of tape that were exposed to RIE and vacuum for as long as 3 hours exhibited no measurable change in thickness, no loss of adhesion, no changes in color, and no melting or other surface changes.
This work was done by Stephen Vargo of Caltech for NASA’s Jet Propulsion Laboratory.
This Brief includes a Technical Support Package (TSP).
Unfortunately the TSP Using Polymide Tape To Mask Against Reactive-Ion Etching (reference NPO-20598) appears to be missing from our system.
Please contact This email address is being protected from spambots. You need JavaScript enabled to view it. for assistance in retrieving it.
Don't have an account? Sign up here.

NASA Tech Briefs Magazine
This article first appeared in the June, 2002 issue of NASA Tech Briefs Magazine.
Read more articles from the archives here.