A report describes an experimental study of the sizes and concentrations of capped (buried) and surface In0.6Ga0.4As/GaAs quantum dots that were grown by metal-organic vapor deposition under the same conditions except for the inclusion or exclusion of capping. [InxGa1-xAs/GaAs quantum dots are lens-shaped islands (typically a few nanometers thick and tens of nanometers in diameter) of InxGa1-xAs grown on a GaAs substrate. As used here, "capping" signifies the growth of a layer of GaAs over the InxGa1-xAs islands.] In the experiments, the sizes of the capped In0.6Ga0.4As/GaAs islands were measured by transmission electron microscopy (TEM).

This work was done by Rosa Leon of Caltech for NASA's Jet Propulsion Laboratory. To obtain a copy of the report, "Adatom condensation and Quantum Dot sizes in InGaAs/GaAs (001)," access the Technical Support Package (TSP) free on-line at www.nasatech.com/tsp  under the Physical Sciences category.


This Brief includes a Technical Support Package (TSP).
Sizes of Surface and Capped InxGa1-x/GaAs Quantum Dots

(reference NPO-21010) is currently available for download from the TSP library.

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This article first appeared in the November, 2001 issue of NASA Tech Briefs Magazine.

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