Alliance Memory (San Carlos, CA) recently introduced a new line of high-speed CMOS double data rate 2 synchronous DRAMs (DDR2 SDRAM) with densities of 512 Mb (AS4C32M16D2) and 1 Gb (AS4C64M16D2, AS4C128M8D2) in 60-ball 8-mm by 10-mm by 1.2-mm and 84-ball 8-mm by 12.5-mm by 1.2-mm FBGA packages. The AS4C32M16D2 is internally configured as four banks of 8M words x 16 bits. The AS4C64M16D2 and AS4C128M8D2 are internally configured as eight banks of 8M x 16 bits and 16M x 8 bits, respectively. The DDR2 SDRAMs offer a synchronous interface, operate from a single + 1.8-V (± 0.1 V) power supply, and are lead (Pb)- and halogen-free. The AS4C32M16D2, AS4C64M16D2, and AS4C128M8D2 feature a fast clock rate of 400 MHz and a data rate of 800 Mbps/pin.