The SCS1xxAGC Series of Silicon Carbide (SiC) Schottky BarrierDiodes (SBDs).

ROHM Semiconductor (San Diego, CA) has announced the SCS1xxAGC series of silicon carbide (SiC) Schottky barrier diodes (SBDs). The SiC diode maintains low forward voltage over a wide operating temperature range, which results in lower power dissipation under actual operating conditions. The 10A rated part, for example, has a VF of 1.5V at 25 °C and 1.6V at 150 °C. Low VF reduces conduction loss, while the ultra-short reverse recovery time (15ns, typical) enables switching and minimizes switching loss.

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Photonics Tech Briefs Magazine

This article first appeared in the October, 2011 issue of Photonics Tech Briefs Magazine.

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