Nanoelectronic Modeling 3-D (NEMO 3-D) is a computer program for numerical modeling of the electronic structure properties of a semiconductor device that is embodied in a crystal containing as many as 16 million atoms in an arbitrary configuration and that has overall dimensions of the order of tens of nanometers. The underlying mathematical model represents the quantum-mechanical behavior of the device resolved to the atomistic level of granularity. The system of electrons in the device is represented by a sparse Hamiltonian matrix that contains hundreds of millions of terms. NEMO 3-D solves the matrix equation on a Beowulf-class cluster computer, by use of a parallel-processing matrix×vector multiplication algorithm coupled to a Lanczos and/or Rayleigh-Ritz algorithm that solves for eigenvalues. In a recent update of NEMO 3-D, a new strain treatment, parameterized for bulk material properties of GaAs and InAs, was developed for two tight-binding submodels. The utility of the NEMO 3-D was demonstrated in an atomistic analysis of the effects of disorder in alloys and, in particular, in bulk InxGal–xAs and in In0.6Ga0.4As quantum dots.
This program was written by Gerhard Klimeck, Fabiano Oyafuso, R. Chris Bowen, and Timothy Boykin of Caltech for NASA's Jet Propulsion Laboratory. For further information, access the Technical Support Package (TSP) free on-line at www.techbriefs.com under the Software category.
This software is available for commercial licensing. Please contact Don Hart of the California Institute of Technology at (818) 393-3425. Refer to NPO-30520.
This Brief includes a Technical Support Package (TSP).
Numerical Modeling of Nanoelectronic Devices
(reference NPO-30520) is currently available for download from the TSP library.
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