Next-Generation Memory Bit

For the first time, engineering researchers have been able to watch in real time the nanoscale process of a ferroelectric memory bit switching from a 0 to a 1 and back again. This video from University of Michigan materials science and engineering professor Xiaoqing Pan and his colleagues reveals the process. Ferroelectric materials have the potential to make memory devices with more storage capacity than magnetic hard drives and faster write speed and longer lifetimes than flash memory.