InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz

Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation’s InP HBT MMIC (monolithic microwave...

Submillimeter-Wave Amplifier Module With Integrated Waveguide Transitions

To increase the usefulness of monolithic millimeter-wave integrated circuit (MMIC) components at submillimeter-wave frequencies, a chip has been designed that...

Logic Gates Made of N-Channel JFETs and Epitaxial Resistors

Prototype logic gates made of n-channel junction field-effect transistors (JFETs) and epitaxial resistors have been demonstrated, with a view toward eventual implementation of...

Vertical Isolation for Photodiodes in CMOS Imagers

In a proposed improvement in complementary metal oxide/semi con ductor (CMOS) image detectors, two additional implants in each pixel would effect vertical isolation between the metal oxide/...

HEMT Amplifiers and Equipment for Their On-Wafer Testing

Power amplifiers comprising InP-based high-electron-mobility transistors (HEMTs) in coplanar-waveguide (CPW) circuits designed for operation at frequencies of hundreds of gigahertz,...

Particle-Charge Spectrometer

An instrument for rapidly measuring the electric charges and sizes (from ≈1 to ≈100 μm) of airborne particles is undergoing development. Conceived for monitoring atmospheric dust particles on Mars,...

Lower-Dark-Current, Higher-Blue-Response CMOS Imagers

Several improved designs for complementary metal oxide/semiconductor (CMOS) integrated- circuit image detectors have been developed, primarily to reduce dark currents (leakage currents)...

Electronic Switch Arrays for Managing Microbattery Arrays

Integrated circuits have been invented for managing the charging and discharging of such advanced miniature energy-storage devices as planar arrays of microscopic energy- storage...

Compact, Single-Stage MMIC InP HEMT Amplifier

Figure 1 depicts a monolithic microwave integrated-circuit (MMIC) single-stage amplifier containing an InP-based high- electron-mobility transistor (HEMT) plus coplanar-waveguide (CPW)...

Three-Stage InP Submillimeter-Wave MMIC Amplifier

A submillimeter-wave monolithic integrated- circuit (S-MMIC) amplifier has been designed and fabricated using an indium phosphide (InP) 35-nm gate-length high electron mobility transistor...

Dual-Input AND Gate From Single-Channel Thin-Film FET

A regio-regular poly (3-hexylthiophene) (RRP3HT) thin-film transistor having a split-gate architecture has been fabricated on a doped silicon/silicon nitride substrate and characterized....

Disabling CNT Electronic Devices by Use of Electron Beams

Bombardment with tightly focused electron beams has been suggested as a means of electrically disabling selected individual carbon-nanotubes (CNTs) in electronic devices. Evidence in...

Nano-Multiplication-Region Avalanche Photodiodes and Arrays

Nano- multiplication- region avalanche photodiodes (NAPDs), and imaging arrays of NAPDs integrated with complementary metal oxide/semiconductor (CMOS) active-pixel-sensor integrated...

Z-RAM

In the electronics industry today there are two commonly used high-speed memory types: static RAM (SRAM) and dynamic RAM (DRAM). Traditionally, SRAM embedded memory has been the designer's choice for fast memory, but since a typical...

Efficient G⁴FET-Based Logic Circuits

A total of 81 optimal logic circuits based on four-gate field-effect transistors (G⁴FETs) have been designed to implement all Boolean functions of up to three variables. The purpose of this...

High-Voltage Power Supply With Fast Rise and Fall Times

A special-purpose high-voltage power supply can be electronically switched on and off with fast rise and fall times, respectively. The output potential is programmable from 20 to 1,250...

Phil Neudeck, Electronics Engineer, NASA's John Glenn Research Center, Cleveland, OH

The Aeronautics Research Mission Directorate at NASA's Glenn Research Center has developed a new silicon carbide differential amplifier integrated...

MMIC Amplifiers for 90 to 130 GHz

The figure shows two monolithic microwave integrated-circuit (MMIC) amplifier chips optimized to function in the frequency range of 90 to 130 GHz, covering nearly all of F-band (90 – 140 GHz). These...

Taking Advantage of Parallel Parametric Testing

The production of many electronic devices begins with wafer processing. In addition to complementary metal oxide semiconductor (CMOS) integrated circuits (ICs), this can include such diverse...

Using G⁴FETs as a Data Router for In-Plane Crossing of Signal Paths

Theoretical analysis and some experiments have demonstrated that silicon-on-insulator (SOI) 4-gate transistors of the type known as G⁴FETs could be efficiently...

G⁴-FETs as Universal and Programmable Logic Gates

An analysis of a patented generic silicon-on-insulator (SOI) electronic device called a G⁴-FET has revealed that the device could be designed to function as a universal and...

MMIC Amplifier Produces Gain of 10 dB at 235 GHz

The first solid-state amplifier capable of producing gain at a frequency >215 GHz has been demonstrated. This amplifier is an intermediate product of a continuing effort to develop...