The IMS5420-TH white light interferometer from Micro-Epsilon, Ortenburg, Germany, opens up new perspectives in industrial thickness measurement of monocrystalline silicon wafers. Due to its broadband superluminescent diode (SLED), the IMS5420-TH can be used for undoped, doped, and highly doped SI wafers. The thickness measuring range extends from 0.05 up to 1.05 mm. The measurable thickness of air gaps is even up to 4 mm. The interferometer is available as either a thickness or a multi-peak thickness measuring system. The multi-peak thickness measuring system can measure the thickness of up to five layers, for example, wafer thickness, air gap, film, and coatings >50 μm. For thickness measurements in difficult environmental conditions, the IMS5420IP67 controller is available with IP67 protection rating.

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