In this work, radial transitions have been successfully mated with a HEMT-based MMIC (high-electron-mobility-transistor-based monolithic microwave integrated circuit) oscillator circuit. The chip has been assembled into a WR2.2 waveguide module for the basic implementation with radial E-plane probe transitions to convert the waveguide mode to the MMIC coplanar waveguide mode. The E-plane transitions have been directly integrated onto the InP substrate to couple the submillimeter-wave energy directly to the waveguides, thus avoiding wirebonds in the RF path. The oscillator demonstrates a measured 1.7 percent DC-RF efficiency at the module level.
The oscillator chip uses 35-nm-gate-length HEMT devices, which enable the high frequency of oscillation, creating the first demonstration of a packaged waveguide oscillator that operates over 300 GHz and is based on InP HEMT technology. The oscillator chip is extremely compact, with dimensions of only 1,085 × 320 μm2 for a total die size of 0.35 mm2. This fully integrated, waveguide oscillator module, with an output power of 0.27 mW at 330 GHz, can provide low-mass, low DC-power-consumption alternatives to existing local oscillator schemes, which require high DC power consumption and large mass.
This oscillator module can be easily integrated with mixers, multipliers, and amplifiers for building high-frequency transmit and receive systems at submillimeter wave frequencies. Because it requires only a DC bias to enable submillimeter wave output power, it is a simple and reliable technique for generating power at these frequencies. Future work will be directed to further improving the applicability of HEMT transistors to submillimeter wave and terahertz applications. Commercial applications include submillimeter-wave imaging systems for hidden weapons detection, airport security, homeland security, and portable low-mass, low-power imaging systems.
This work was done by Vesna Radisic, W. R. Deal, X.B. Mei, Wayne Yoshida, P.H. Liu, Jansen Uyeda, and Richard Lai of Northrop Grumman Corporation (NGC); and Lorene Samoska, King Man Fung, Todd Gaier, and David Pukala of Caltech for NASA’s Jet Propulsion Laboratory. The contributors would like to acknowledge the support of Dr. Mark Rosker and the Army Research Laboratory. This work was supported by the DARPA SWIFT Program and Army Research Laboratory under the DARPA MIPR no.06-U037 and ARL Contract no. W911QX-06-C-0050. For more information, download the Technical Support Package (free white paper) at www.techbriefs.com/tsp under the Electronics/Computers category. NPO-45736
This Brief includes a Technical Support Package (TSP).
Demonstration of a Submillimeter-Wave HEMT Oscillator Module at 330 GHz
(reference NPO-45736) is currently available for download from the TSP library.
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Overview
The document presents a technical overview of the first demonstration of a submillimeter-wave High Electron Mobility Transistor (HEMT) oscillator module operating at 330 GHz, as detailed in NASA Tech Brief NPO-45736. The development addresses significant challenges in generating reliable fundamental sources in the sub-millimeter wave regime, which is crucial for applications such as radiometry and as local oscillators for terahertz mixers.
The report outlines the problem that, while mixer-based receiver technologies have advanced beyond 1.0 THz, fundamental sources have struggled to achieve frequencies above 300 GHz. The solution involves the integration of Monolithic Microwave Integrated Circuit (MMIC) technologies into waveguide packaging, which is essential for successful system acceptance of sub-millimeter wave components. The document highlights the difficulties in packaging MMICs due to the geometrical constraints of conventional machining technologies.
The oscillator module utilizes WR2.2 waveguide technology, featuring radial E-plane transitions that connect the MMIC to the waveguide. The oscillator chip, designed in coplanar waveguide (CPW) technology, is compact, measuring only 1085 x 320 μm², with a total die size of 0.35 mm². It employs 35 nm gate length HEMT devices, enabling high-frequency oscillation. The module achieved an output power of 0.27 mW at 330 GHz, marking a significant milestone in the development of packaged waveguide oscillators based on InP HEMT technology.
The document also compares this achievement with previous advancements in oscillator technologies, noting that while oscillators using InP and SiGe heterojunction bipolar transistors (HBT) have been demonstrated up to 287 GHz, and CMOS oscillators up to 324 GHz, this is the first fully integrated waveguide oscillator module operating above 300 GHz.
In conclusion, the successful demonstration of this HEMT oscillator module represents a critical step forward in submillimeter-wave technology, paving the way for enhanced performance in various scientific and commercial applications. The document encourages further exploration and collaboration in this field, providing contact information for additional inquiries related to the research and technology discussed.
