The development of high-performance, low-noise amplifiers has applications for future earth science and planetary instruments with low power and volume.

Packaging of MMIC LNA (monolithic microwave integrated circuit low-noise amplifier) chips at frequencies over 200 GHz has always been problematic due to the high loss in the transition between the MMIC chip and the waveguide medium in which the chip will typically be used. In addition, above 200 GHz, wirebond inductance between the LNA and the waveguide can severely limit the RF matching and bandwidth of the final waveguide amplifier module.