Laser absorption spectroscopy has emerged as one of the most important applications for semiconductor quantum cascade (QC) lasers, particularly in the mid-infrared spectral regime where many gases of interest exhibit fundamental absorption features. Laser absorption spectrometers have the potential to match or exceed the sensitivity of electrochemical sensors presently used aboard the International Space Station, and laser-based detectors are capable of long-duration maintenance-free operation without consumable components.
To fabricate buried heterostructure distributed-feedback (DFB) lasers, the QC laser wafer must be grown using precise molecular beam epitaxy or chemical vapor deposition techniques to form the nanometer-scale quantum well structures that make up the QC gain region. Following grating fabrication using lithography and chemical etching, the corrugated semiconductor surface must be thoroughly cleaned to enable an additional epitaxial growth step, as even a fraction of one monolayer of contamination will impede epitaxy. Epitaxial growth requires capital-intensive high-vacuum reactor systems. Eliminating this second growth step greatly reduces the overall process requirements and cost of DFB QC laser fabrication.
Fabrication of index-coupled DFB QC lasers with low-loss, spin-on dielectric materials enables high efficiency while maintaining lower-cost processing. Continuous-wave (CW) operation of QC lasers at room temperature was demonstrated using a single growth process followed by etched grating fabrication with polyimide infilling. Once the initial wafer growth is performed with molecular beam epitaxy, the remaining processing steps can be carried out in a standard semiconductor processing facility. Sufficient interaction between the optical mode and DFB grating is achieved by deep anisotropic etching and infilling with high refractive-index contrast material. Gratings are etched into the QC upper cladding layer using a chlorine/ hydrogen/methane plasma etching process, and the high-aspect-ratio grating openings are filled with spin-on polyimide. This novel DFB QC laser geometry avoids optical loss by making use of etched index-coupled gratings infilled with non-absorbing polymer, and electrical access is maintained since the gratings do not span the full width of the laser ridge.
This work was done by Ryan M. Briggs, Clifford F. Frez, and Siamak Forouhar of Caltech for NASA’s Jet Propulsion Laboratory.
In accordance with Public Law 96-517, the contractor has elected to retain title to this invention. Inquiries concerning rights for its commercial use should be addressed to:
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Refer to NPO-49037.
This Brief includes a Technical Support Package (TSP).
Semiconductor Quantum Cascade Lasers Fabricated Without Epitaxial Regrowth
(reference NPO49037) is currently available for download from the TSP library.
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Overview
The document is a Technical Support Package from NASA's Jet Propulsion Laboratory (JPL) detailing the development of Semiconductor Quantum Cascade Lasers (QCLs) fabricated without the need for epitaxial regrowth. This research, conducted by Ryan M. Briggs, Clifford Frez, and Siamak Forouhar, aims to advance the technology of QCLs, which are crucial for various applications, including environmental monitoring and spectroscopy.
The document includes a schematic representation of a Distributed Feedback Quantum Cascade Laser (DFB-QCL), showcasing its design features such as an etched surface grating, spin-on polyimide infilling, and a silicon nitride sidewall isolation layer. The active region of the laser consists of multiple periods of quantum wells and barriers, with a specific thickness and electric field application that influences the conduction band edge and electron energy states.
Figures within the document illustrate the fabrication process, including scanning electron micrographs of the DFB-QCL devices, which highlight the high-aspect-ratio etched grating structure and the completed laser's emission facet. The performance characteristics of a 2-mm-long DFB-QCL are also presented, showing continuous wave (CW) light-current-voltage performance and laser emission spectra at varying heat-sink temperatures and injection currents. Notably, the document references the position of carbon monoxide absorption lines, which are significant for applications in atmospheric studies.
The research is part of a broader initiative under NASA's Commercial Technology Program, aimed at disseminating aerospace-related technological advancements with potential commercial applications. The document emphasizes the importance of compliance with U.S. export regulations and the proprietary nature of the information contained within.
For further inquiries or assistance regarding this technology, the document provides contact information for the Innovative Technology Assets Management office at JPL. It also includes a disclaimer stating that the U.S. Government does not assume liability for the use of the information provided.
In summary, this Technical Support Package serves as a comprehensive overview of the advancements in semiconductor QCL technology, highlighting the innovative fabrication methods and potential applications in various fields, while also ensuring compliance with regulatory standards.
