Electronics & Software

Semiconductors & ICs

Review the latest advances and technical briefs in Semiconductor and Integrated Circuit Systems (ICS) technologies essential to Design Engineers. Find new products and applications in semiconductors, electronics, electronic components, electronic circuits, integrated circuits, and ICS.

A radial probe transition between a monolithic microwave integrated circuit (MMIC) and a waveguide has been designed for operation at frequency of 340 GHz and to be fabricated as part...

The first solid-state amplifier capable of producing gain at a frequency >215 GHz has been demonstrated. This amplifier is an intermediate product of a continuing effort to develop...

Briefs: Semiconductors & ICs
Circuit for Full Charging of Series Lithium-Ion Cells

An advanced charger has been proposed for a battery that comprises several lithium-ion cells in series. The proposal is directed toward charging the cells in as nearly an optimum manner as possible despite unit-to-unit differences among the nominally identical cells.

Briefs: Semiconductors & ICs
Analog Nonvolatile Computer Memory Circuits

In nonvolatile random-access memory (RAM) circuits of a proposed type, digital data would be stored in analog form in ferroelectric field-effect transistors (FFETs). This type of memory circuit would offer advantages over prior volatile and nonvolatile types:

Briefs: Semiconductors & ICs
Imaging Spectrometer on a Chip

A proposed visible-light imaging spectrometer on a chip would be based on the concept of a heterostructure comprising multiple layers of silicon-based photodetectors interspersed with long-wavelength-pass...

Briefs: Semiconductors & ICs
SiC Multi-Chip Power Modules as Power-System Building Blocks

The term “SiC MCPMs” (wherein “MCPM” signifies “multi-chip power module”) denotes electronic power-supply modules containing multiple silicon carbide power devices and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building...

A research and development effort now underway is directed toward satisfying requirements for a new type of relatively inexpensive, lightweight, microwave antenna array and associated...

Theoretical analysis and some experiments have shown that the silicon-on-insulator (SOI) 4-gate transistors known as G4-FETs can be used as building blocks of four-quadrant analog...

Two modern cryogenic variants of the Pound circuit have been devised to increase the frequency stability of microwave oscillators that include cryogenic sapphire-filled cavity...

Briefs: Semiconductors & ICs
Semiconductor Bolometers Give Background-Limited Performance

Semiconductor bolometers that are capable of detecting electromagnetic radiation over most or all of the infrared spectrum and that give background-limited performance at operating temperatures from 20 to 300 K have been invented. The term "background-limited performance" as applied...

A multichannel dielectric-resonator oscillator (DRO), built as a prototype of a local oscillator for an X-band transmitter or receiver, is capable of being electrically tuned among and...

According to a proposal, a silicon dioxide layer in a high speed, low power, silicon-based electro-optical modulator would be replaced by a layer of lead zirconate titanate or other...

Multiplexing and differential transducers based on tunnel-diode oscillators (TDOs) would be developed, according to a proposal, for operation at very low and/or widely varying...

A three-stage monolithic microwave integrated circuit (MMIC) W-band amplifier has been constructed and tested in a continuing effort to develop amplifiers as well as oscillators,...

A proposed improved method of externally controlled time multiplexing of the readouts of focal plane arrays of pairs of stacked quantum well infrared photodetectors (QWIPs) that...

Techs for License: Semiconductors & ICs
Technique Measures Material Properties

Developed for quality control and wafer metrology in the semiconductor manufacturing market, this non-destructive technology may be highly adaptable to measuring material properties such as a...

Briefs: Semiconductors & ICs
Carbon-Nanotube Schottky Diodes

Schottky diodes based on semiconducting single-walled carbon nanotubes are being developed as essential components of the next generation of submillimeter-wave sensors and sources. Initial performance predictions have shown that the performance characteristics of these devices can exceed those of the...

Articles: Electronics & Computers
30 Years of Electronics & Semiconductors

In celebration of the 30th Anniversary of NASA Tech Briefs, our features in 2006 highlight a different technology category each month, tracing the past 30 years of the technology, and continuing with a glimpse into the future of where the technology is headed. Along the way, we include insights from...

A family of experimental highly miniaturized field-effect transistors (FETs) is based on exploitation of the electrical properties of nanofibers of polyaniline/ polyethylene oxide...

Briefs: Semiconductors & ICs
Waveguide Power-Amplifier Module for 80 to 150 GHz

A waveguide power-amplifier module capable of operating over the frequency range from 80 to 150 GHz has been constructed. The module comprises a previously reported power amplifier packaged in a waveguide housing that is compatible with WR-8 waveguides. (WR-8 is a standard waveguide size for the...

Improved low-resistance, semitransparent back contacts, and a method of fabricating them, have been developed for solar photovoltaic cells that are made from thin films of I-III-VI2...

Briefs: Semiconductors & ICs
Single-Chip T/R Module for 1.2 GHz

A single-chip CMOS-based (complementary-metal-oxide-semi-conductor-based) transmit/receive (T/R) module is being developed for L-band radar systems. Previous T/R module implementations required multiple...

The figure is a schematic diagram of a complementary metal oxide/semiconductor (CMOS) electronic circuit that performs one of three different logic functions, depending on the level of...

Briefs: Semiconductors & ICs
Submicrosecond Power-Switching Test Circuit

A circuit that changes an electrical load in a switching time shorter than 0.3 microsecond has been devised. This circuit can be used in testing the regulation characteristics of power-supply...

Briefs: Semiconductors & ICs
MMIC DHBT Common-Base Amplifier for 172 GHz

Figure 1 shows a single-stage monolithic microwave integrated circuit (MMIC) power amplifier in which the gain element is a double-heterojunction bipolar transistor (DHBT) connected in common-base...

A system of electronic instrumentation, constituting the equivalent of a two-port vector network analyzer, has been developed for use in on-wafer measurement of key electrical...

Briefs: Semiconductors & ICs
PVM Enhancement for Beowulf Multiple-Processor Nodes

A recent version of the Parallel Virtual Machine (PVM) computer program has been enhanced to enable use of multiple processors in a single node of a Beowulf system (a cluster of personal computers that runs the Linux operating system). A previous version of PVM had been enhanced by addition of...

Briefs: Semiconductors & ICs
Programs for Testing Processor-in-Memory Computing Systems

The Multithreaded Microbenchmarks for Processor-InMemory (PIM) Compilers, Simulators, and Hardware are computer programs arranged in a series for use in testing the performances of PIM computing systems, including compilers, simulators, and hardware. The programs at the beginning of the...

A fault-tolerant computer architecture has been conceived in an effort to reduce vulnerability to single-event upsets (spurious bit flips caused by impingement of energetic ionizing...

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