Closely following the development reported in the article, "Low-Noise MMIC Amplifiers for 120 to 180 GHz" (NPO-42783), three new monolithic microwave integrated circuit (MMIC) amplifiers that would operate in the 120-to-200- GHz frequency band have been designed and are under construction at this writing. The active devices in these amplifiers are InP high-electron-mobility transistors (HEMTs). These amplifiers (see figure) are denoted the LSLNA150, the LSA200, and the LSA185, respectively.

These Three MMIC Amplifiers have been designed to be suitable for a variety of applications at frequencies up to about 200 GHz.
Like the amplifiers reported in the immediately preceding article, the LSLNA150 (1) is intended to be a prototype of low-noise amplifiers (LNAs) to be incorporated into spaceborne instruments for sensing cosmic microwave background radiation and (2) has potential for terrestrial use in electronic test equipment, passive millimeter-wave imaging systems, radar receivers, communication receivers, and systems for detecting hidden weapons. The HEMTs in this amplifier were fabricated according to 0.08-μm design rules of a commercial product line of InP HEMT MMICs at HRL Laboratories, LLC, with a gate geometry of 2 fingers, each 15 μm wide. On the basis of computational simulations, this amplifier is designed to afford at least 15 dB of gain, with a noise figure of no more than about 6 dB, at frequencies from 120 to 160 GHz. The measured results of the amplifier are shown next to the chip photo, with a gain of 16 dB at 150 GHz. Noise figure work is ongoing.

The LSA200 and the LSA185 are intended to be prototypes of transmitting power amplifiers for use at frequencies between about 180 and about 200 GHz. These amplifiers have also been fabricated according to rules of the aforesaid commercial product line of InP HEMT MMICs, except that the HEMTs in these amplifiers are characterized by a gate geometry of 4 fingers, each 37 μm wide. The measured peak performance of the LSA200 is characterized by a gain of about 1.4 dB at a frequency of 190 GHz; the measured peak performance of the LSA185 is characterized by a gain of about 2.7 dB at a frequency of 181 GHz. The measured gain results of each chip are shown next to their respective photos.

This work was done by Lorene Samoska of Caltech and Adele Schmitz of HRL Laboratories, LLC, for NASA’s Jet Propulsion Laboratory. NPO-42846

Topics:
Amplifiers Computer simulation Electronic equipment Hazardous materials Hazards and emergency operations Radar Radiation Semiconductors & ICs Simulation and modeling Transistors
This Brief includes a Technical Support Package (TSP).
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Three MMIC Amplifiers for the 120-to-200 GHz Frequency Band

(reference NPO-42846) is currently available for download from the TSP library.

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NASA Tech Briefs Magazine

This article first appeared in the October, 2009 issue of NASA Tech Briefs Magazine (Vol. 33 No. 10).

Read more articles from the archives here.

Overview

The document titled "Amplifiers Designs in G-Band NTR#42846" by L. Samoska presents advancements in the development of MMIC (Monolithic Microwave Integrated Circuit) amplifiers designed for the 120-to-200 GHz frequency band, specifically focusing on new low noise amplifiers (LNAs) and power amplifiers. This work is part of NASA's efforts to enhance technology for aerospace applications and is documented under the NASA Tech Briefs.

The key highlights of the document include:

  1. Low Noise Amplifier (LNA) Development: A new G-Band Low Noise Amplifier chip, referred to as LSLNA150, has been designed at NASA's Jet Propulsion Laboratory (JPL) and is currently being fabricated at HRL Laboratories, LLC. The LNA is estimated to have a noise figure of 6 dB and a gain of 15 dB, based on existing High Electron Mobility Transistor (HEMT) models. The chip's performance is promising, with measured gain reaching 16 dB at a frequency of 150 GHz.

  2. Power Amplifier Designs: The document also details the design of two new single-stage power amplifiers for prototyping at frequencies of 185 GHz and 200 GHz, designated as LSA185 and LSA200. These amplifiers were developed in collaboration with HRL Laboratories, which handled the layout and fabrication processes. The document includes simulated performance data and chip layouts for these amplifiers, showcasing their potential for high-frequency applications.

  3. Technical Support and Collaboration: The document emphasizes the collaborative nature of the project, highlighting the partnership between JPL and HRL Laboratories. It also notes that the information is part of NASA's Commercial Technology Program, aimed at disseminating aerospace-related developments with broader technological, scientific, or commercial applications.

  4. Contact Information: For further inquiries or assistance regarding the research and technology discussed, the document provides contact details for the Innovative Technology Assets Management office at JPL.

Overall, this document serves as a technical support package that encapsulates the innovative designs and expected performance of new MMIC amplifiers, contributing to advancements in high-frequency technology that could have significant implications for various applications in aerospace and beyond.