Semiconductors & ICs

Access our comprehensive library of technical briefs on semiconductors & ICs, from engineering experts at NASA and major government, university, and commercial laboratories.

Briefs : Semiconductors & ICs
Quad-Chip Double-Balanced Frequency Tripler

Solid-state frequency multipliers are used to produce tunable broadband sources at millimeter and submillimeter wavelengths. The maximum power produced by a single chip is limited by the electrical breakdown of the semiconductor and by the thermal management properties of the chip. The solution is to...

Briefs : Semiconductors & ICs
Radiation-Hardened Solid-State Drive

A method is provided for a radiationhardened (rad-hard) solid-state drive for space mission memory applications by combining rad-hard and commercial offthe- shelf (COTS) non-volatile memories (NVMs) into a hybrid architecture. The architecture is controlled by a rad-hard ASIC (application specific integrated...

Briefs : Semiconductors & ICs
Reconfigurable, Bi-Directional Flexfet Level Shifter for Low- Power, Rad-Hard Integration

Two prototype Reconfigurable, Bidirectional Flexfet Level Shifters (ReBiLS) have been developed, where one version is a stand-alone component designed to interface between external low voltage and high voltage, and the other version is an embedded...

Briefs : Semiconductors & ICs
Compact, Miniature MMIC Receiver Modules for an MMIC Array Spectrograph

A single-pixel prototype of a W-band detector module with a digital backend was developed to serve as a building block for large focal-plane arrays of monolithic millimeter-wave integrated circuit (MMIC) detectors. The module uses low-noise amplifiers, diode-based mixers,...

Briefs : Semiconductors & ICs
Magnetic-Field-Tunable Superconducting Rectifier

Superconducting electronic components have been developed that provide current rectification that is tunable by design and with an externally applied magnetic field to the circuit component. The superconducting material used in the device is relatively free of pinning sites with its critical...

Briefs : Semiconductors & ICs
Waveguide Transition for Submillimeter-Wave MMICs

An integrated waveguide-to-MMIC (monolithic microwave integrated circuit) chip operating in the 300-GHz range is designed to operate well on highpermittivity semiconductor substrates typical for an MMIC amplifier, and allows a wider MMIC substrate to be used, enabling integration with larger...

Briefs : Semiconductors & ICs
Hardware Implementation of a Bilateral Subtraction Filter

A bilateral subtraction filter has been implemented as a hardware module in the form of a field-programmable gate array (FPGA). In general, a bilateral subtraction filter is a key subsystem of a high-quality stereoscopic machine vision system that utilizes images that are large and/or...

Briefs : Semiconductors & ICs
Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate

SiGe is an important semiconductor alloy for high-speed field effect transistors (FETs), high-temperature thermoelectric devices, photovoltaic solar cells, and photon detectors. The growth of SiGe layer is difficult because SiGe alloys have different lattice constants...

Briefs : Semiconductors & ICs
Low-Noise MMIC Amplifiers for 120 to 180 GHz

Three-stage monolithic millimeter-wave integrated-circuit (MMIC) amplifiers capable of providing useful amounts of gain over the frequency range from 120 to 180 GHz have been developed as prototype low-noise amplifiers (LNAs) to be incorporated into instruments for sensing cosmic microwave background...

Briefs : Semiconductors & ICs
Three MMIC Amplifiers for the 120-to-200 GHz Frequency Band

Closely following the development reported in the article, "Low-Noise MMIC Amplifiers for 120 to 180 GHz" (NPO-42783), three new monolithic microwave integrated circuit (MMIC) amplifiers that would operate in the 120-to-200- GHz frequency band have been designed and are under...

Briefs : Semiconductors & ICs
Parallel-Processing CMOS Circuitry for M-QAM and 8PSK TCM

There has been some additional development of parts reported in “Multi-Modulator for Bandwidth-Efficient Communication” (NPO-40807), NASA Tech Briefs, Vol. 32, No. 6 (June 2009), page 34. The focus was on

Briefs : Semiconductors & ICs
Circuit for Driving Piezoelectric Transducers

The figure schematically depicts an oscillator circuit for driving a piezoelectric transducer to excite vibrations in a mechanical structure. The circuit was designed and built to satisfy application-specific requirements to drive a selected one of 16 such transducers at a regulated amplitude and...

Briefs : Semiconductors & ICs
Board Saver for Use With Developmental FPGAs

A device denoted a board saver has been developed as a means of reducing wear and tear of a printed-circuit board onto which an antifuse field-programmable gate array (FPGA) is to be eventually soldered permanently after a number of design iterations. The need for the board saver or a similar device...

Briefs : Semiconductors & ICs
Digital Synchronizer Without Metastability

A proposed design for a digital synchronizing circuit would eliminate metastability that plagues flip-flop circuits in digital input/output interfaces. This metastability is associated with sampling, by use of flip-flops, of an external signal that is asynchronous with a clock signal that drives the...

Briefs : Semiconductors & ICs
Efficient Multiplexer FPGA Block Structures Based on G⁴FETs

Generic structures have been conceived for multiplexer blocks to be implemented in field-programmable gate arrays (FPGAs) based on four-gate field-effect transistors (G4FETs). This concept is a contribution to the continuing development of digital logic circuits based on...

Briefs : Semiconductors & ICs
VLSI Microsystem for Rapid Bioinformatic Pattern Recognition

A system comprising very-large-scale integrated (VLSI) circuits is being developed as a means of bioinformatics-oriented analysis and recognition of patterns of fluorescence generated in a microarray in an advanced, highly miniaturized, portable genetic-expression- assay instrument....

Briefs : Semiconductors & ICs
Low-Noise Amplifier for 100 to 180 GHz

A three-stage monolithic millimeter-wave integrated-circuit (MMIC) amplifier designed to exhibit low noise in operation at frequencies from about 100 to somewhat above 180 GHz has been built and tested. This is a prototype of broadband amplifiers that have potential utility in diverse applications,...

Briefs : Semiconductors & ICs
T/R Multi-Chip MMIC Modules for 150 GHz

Modules containing multiple monolithic microwave integrated-circuit (MMIC) chips have been built as prototypes of transmitting/receiving (T/R) modules for millimeter-wavelength radar systems, including phased-array radar systems to be used for diverse purposes that could include guidance and avoidance of...

Briefs : Semiconductors & ICs
Some Improvements in Utilization of Flash Memory Devices

Two developments improve the utilization of flash memory devices in the face of the following limitations: (1) a flash write element (page) differs in size from a flash erase element (block), (2) a block must be erased before its is rewritten, (3) lifetime of a flash memory is typically...

Briefs : Semiconductors & ICs
GPS/MEMS IMU/Microprocessor Board for Navigation

A miniaturized instrumentation package comprising a (1) Global Positioning System (GPS) receiver, (2) an inertial measurement unit (IMU) consisting largely of surface-micromachined sensors of the microelectro-mechanical systems (MEMS) type, and (3) a microprocessor, all residing on a single...

Briefs : Semiconductors & ICs
InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz

Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation’s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT...

Briefs : Semiconductors & ICs
Submillimeter-Wave Amplifier Module With Integrated Waveguide Transitions

To increase the usefulness of monolithic millimeter-wave integrated circuit (MMIC) components at submillimeter-wave frequencies, a chip has been designed that incorporates two integrated, radial E-plane probes with an MMIC amplifier in between, thus creating a fully...

Briefs : Semiconductors & ICs
Economical Implementation of a Filter Engine in an FPGA

A logic design has been conceived for a field-programmable gate array (FPGA) that would implement a complex system of multiple digital state-space filters. The main innovative aspect of this design lies in providing for reuse of parts of the FPGA hardware to perform different parts of the...

Briefs : Semiconductors & ICs
Logic Gates Made of N-Channel JFETs and Epitaxial Resistors

Prototype logic gates made of n-channel junction field-effect transistors (JFETs) and epitaxial resistors have been demonstrated, with a view toward eventual implementation of digital logic devices and systems in silicon carbide (SiC) integrated circuits (ICs). This development is...

Briefs : Semiconductors & ICs
Vertical Isolation for Photodiodes in CMOS Imagers

In a proposed improvement in complementary metal oxide/semi con ductor (CMOS) image detectors, two additional implants in each pixel would effect vertical isolation between the metal oxide/ semiconductor field-effect transistors (MOSFETs) and the photodiode of the pixel. This improvement is...

Briefs : Semiconductors & ICs
Onboard Data Processor for Change-Detection Radar Imaging

A computer system denoted a change-detection onboard processor (CDOP) is being developed as a means of processing the digitized output of a synthetic-aperture radar (SAR) apparatus aboard an aircraft or spacecraft to generate images showing changes that have occurred in the terrain below...

Briefs : Semiconductors & ICs
HEMT Amplifiers and Equipment for Their On-Wafer Testing

Power amplifiers comprising InP-based high-electron-mobility transistors (HEMTs) in coplanar-waveguide (CPW) circuits designed for operation at frequencies of hundreds of gigahertz, and a test set for on-wafer measurement of their power levels have been developed. These amplifiers utilize...

Briefs : Semiconductors & ICs
On-Wafer Measurement of a Silicon-Based CMOS VCO at 324 GHz

The world’s first silicon- based complementary metal oxide/semi- conductor (CMOS) integrated-circuit voltage-controlled oscillator (VCO) operating in a frequency range around 324 GHz has been built and tested. Concomitantly, equipment for measuring the performance of this oscillator...

Briefs : Semiconductors & ICs
Lower-Dark-Current, Higher-Blue-Response CMOS Imagers

Several improved designs for complementary metal oxide/semiconductor (CMOS) integrated- circuit image detectors have been developed, primarily to reduce dark currents (leakage currents) and secondarily to increase responses to blue light and increase signal- handling capacities, relative to...

Briefs : Semiconductors & ICs
Low-Temperature Supercapacitors

An effort to extend the low-temperature operational limit of supercapacitors is currently underway. At present, commercially available non-aqueous supercapacitors are rated for a minimum operating temperature of –40 °C. A capability to operate at lower temperatures would be desirable for delivering power to...

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