Semiconductors & ICs

Access our comprehensive library of technical briefs on semiconductors & ICs, from engineering experts at NASA and major government, university, and commercial laboratories.

Briefs : Semiconductors & ICs
Making Wide-IF SIS Mixers With Suspended Metal-Beam Leads

A process that employs silicon-on-insulator (SOI) substrates and silicon (Si) micromachining has been devised for fabricating wide intermediate frequency band (wide-IF) superconductor/ insulator/ superconductor (SIS) mixer devices that result in suspended gold beam leads used for...

Briefs : Semiconductors & ICs
Mathematical Modeling of a Copper-Deposition System for Integrated Circuits

Advanced packaging techniques are the key to utilizing state-of-the-art microelectronic devices. The flip-chip method has become a cost-effective means of erasing many packaging and thermal issues that could spell disaster for high-density, high-power integrated circuits...

Briefs : Semiconductors & ICs
Stripline/Microstrip Transition in Multilayer Circuit Board

A stripline to microstrip transition has been incorporated into a multilayer circuit board that supports a distributed solid-state microwave power amplifier, for the purpose of coupling the microwave signal from a buried-layer stripline to a top-layer microstrip. The design of the...

Briefs : Semiconductors & ICs
Multifunctional Logic Gate Controlled by Supply Voltage

The figure is a schematic diagram of a complementary metal oxide/semiconductor (CMOS) electronic circuit that functions as a NAND gate at a power-supply potential (Vdd) of 3.3 V and as NOR gate for Vdd = 1.8 V. In the intermediate Vdd range of 1.8 to 3.3 V,...

Briefs : Semiconductors & ICs
Multifunctional Logic Gate Controlled by Temperature

The figure is a schematic diagram of a complementary metal oxide/semiconductor (CMOS) electronic circuit that has been designed to function as a NAND gate at a temperature between 0 and 80 °C and as a NOR gate at temperatures from 120 to 200 °C. In the intermediate temperature range of 80 to...

Briefs : Semiconductors & ICs
Improved Method of Manufacturing SiC Devices

The phrase, "common-layered architecture for semiconductor silicon carbide" ("CLASSiC") denotes a method of batch fabrication of microelectromechanical and semiconductor devices from bulk silicon carbide. CLASSiC is the latest in a series of related methods developed in recent years in continuing...

Briefs : Semiconductors & ICs
LC Circuits for Diagnosing Embedded Piezoelectric Devices

A recently invented method of nonintrusively detecting faults in piezoelectric devices involves measurement of the resonance frequencies of inductor-capacitor (LC) resonant circuits. The method is intended especially to enable diagnosis of piezoelectric sensors, actuators, and...

Briefs : Semiconductors & ICs
HEMT Frequency Doubler With Output at 300 GHz

An active frequency doubler in the form of an InP-based monolithic microwave integrated circuit (MMIC) containing a high electron mobility transistor (HEMT) has been demonstrated in operation at output frequencies in the vicinity of 300 GHz. This is the highest frequency HEMT doubler reported to...

Briefs : Semiconductors & ICs
Single-Chip FPGA Azimuth Pre-Filter for SAR

A field-programmable gate array (FPGA) on a single lightweight, low power integrated-circuit chip has been developed to implement an azimuth pre-filter (AzPF) for a synthetic-aperture radar (SAR) system. The AzPF is needed to enable more efficient use of data-transmission and data-processing resources:...

Briefs : Semiconductors & ICs
Alumina or Semiconductor Ribbon Waveguides at 30 to 1,000 GHz

Ribbon waveguides made of alumina or of semiconductors (Si, InP, or GaAs) have been proposed as low-loss transmission lines for coupling electronic components and circuits that operate at frequencies from 30 to 1,000 GHz. In addition to low losses (and a concomitant ability to...

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