Electronics & Software

Semiconductors & ICs

Briefs : Semiconductors & ICs
Lower-Dark-Current, Higher-Blue-Response CMOS Imagers

Several improved designs for complementary metal oxide/semiconductor (CMOS) integrated- circuit image detectors have been developed, primarily to reduce dark currents (leakage currents) and secondarily to increase responses to blue light and increase signal- handling capacities, relative to...

Briefs : Semiconductors & ICs
Low-Temperature Supercapacitors

An effort to extend the low-temperature operational limit of supercapacitors is currently underway. At present, commercially available non-aqueous supercapacitors are rated for a minimum operating temperature of –40 °C. A capability to operate at lower temperatures would be desirable for delivering power to...

Briefs : Semiconductors & ICs
MEMS/ECD Method for Making Bi₂₋ₓSbₓTe₃ Thermoelectric Devices

A method of fabricating Bi2–xSbxTe3-based thermoelectric microdevices involves a combination of (1) techniques used previously in the fabrication of integrated circuits and of microelectromechanical systems (MEMS) and (2) a relatively...

Briefs : Semiconductors & ICs
Compact, Single-Stage MMIC InP HEMT Amplifier

Figure 1 depicts a monolithic microwave integrated-circuit (MMIC) single-stage amplifier containing an InP-based high- electron-mobility transistor (HEMT) plus coplanar-waveguide (CPW) transmission lines for impedance matching and input and output coupling, all in a highly miniaturized layout as...

Briefs : Semiconductors & ICs
Radiation-Insensitive Inverse Majority Gates

To help satisfy a need for high-density logic circuits insensitive to radiation, it has been proposed to realize inverse majority gates as microscopic vacuum electronic devices. In comparison with solid-state electronic devices ordinarily used in logic circuits, vacuum electronic devices are...

Articles : Sensors/Data Acquisition
Performance of 1mm² Silicon Photomultipliers

A silicon photomultiplier (SPM) is a new type of semiconductor detector that has the potential to replace the photo- multiplier tube (PMT) detector in many applications. In common with a PMT detector, the output of an SPM is an easily detectable current pulse for each detected photon and can be used...

Briefs : Semiconductors & ICs
Dual-Input AND Gate From Single-Channel Thin-Film FET

A regio-regular poly (3-hexylthiophene) (RRP3HT) thin-film transistor having a split-gate architecture has been fabricated on a doped silicon/silicon nitride substrate and characterized. RRP3HT is a semiconducting polymer that has a carrier mobility and on/off ratio when used in a field...

Briefs : Semiconductors & ICs
Split-Block Waveguide Polarization Twist for 220 to 325 GHz

Figure 1. A Channel Having Asymmetric Steps is cut into the lower block.An identical channel is cut into the upper block. Then with the help ofalignment pins, the blocks are assembled so that the two channels mergeinto one channel that makes a transition between two orthogonal...

Briefs : Semiconductors & ICs
Error-Detecting Counters for FPGA and ASIC State Machines

Error-detecting counters have been proposed as parts of fault-tolerant finite state machines that could be implemented in field-programmable gate arrays (FPGAs) and application-specific integrated circuits that perform sequential logic functions. The use of error-detecting counters would...

Briefs : Semiconductors & ICs
Efficient G⁴FET-Based Logic Circuits

A total of 81 optimal logic circuits based on four-gate field-effect transistors (G4FETs) have been designed to implement all Boolean functions of up to three variables. The purpose of this development was to lend credence to the expectation that logic circuits based on G4FETs could be...

Briefs : Semiconductors & ICs
Circuit and Method for Communication Over DC Power Line

A circuit and method for transmitting and receiving on-off-keyed (OOK) signals with fractional signal-to-noise ratios uses available high-temperature silicon-on-insulator (SOI) components to move computational, sensing, and actuation abilities closer to high- temperature or high- ionizing...

Briefs : Semiconductors & ICs
Advanced Ultra-Thin Integrated Electronics on Membranes

A method of fabricating flexible assemblies comprising flexible integrated circuits bonded onto or into flexible membranes has been developed. The method provides for bonding of thinned (more specifically, thin enough to be flexible) integrated-circuit chips to the membranes and for...

Briefs : Semiconductors & ICs
MMIC Amplifiers for 90 to 130 GHz

The figure shows two monolithic microwave integrated-circuit (MMIC) amplifier chips optimized to function in the frequency range of 90 to 130 GHz, covering nearly all of F-band (90 – 140 GHz). These amplifiers were designed specifically for local-oscillator units in astronomical radio telescopes such as the...

Briefs : Semiconductors & ICs
Microrectenna: A Terahertz Antenna and Rectifier on a Chip

A microrectenna that would operate at a frequency of 2.5 THz has been designed and partially fabricated. The circuit is intended to be a prototype of an extremely compact device that could be used to convert radio-beamed power to DC to drive microdevices (see Figure 1).

Briefs : Semiconductors & ICs
Cumulative Timers for Microprocessors

It has been proposed to equip future microprocessors with electronic cumulative timers, for essentially the same reasons for which land vehicles are equipped with odometers (total-distance-traveled meters) and aircraft are equipped with Hobbs meters (total-engine-operating time meters). Heretofore, there has...

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